Harvey Beere

Throughout my academic career my research interests have covered the development of new device technologies encompassing diverse research fields and material systems. Underpinning this is the world leading molecular beam epitaxy (MBE) facilities of the Semiconductor Physics group at Cambridge. My research initially concentrated on semiconductor growth for low-dimensional electronic transport experiments. In the early 2000’s I was the MBE researcher in the European consortium ‘WANTED’, whose highlight was the demonstration of the first terahertz (THz) quantum cascade laser (QCL).

Over the last 20 years, I have been involved in multiple and varied research projects that build on the world leading growth of high purity III-V semiconductors to produce novel electronic/optical structures for a variety of applied and fundamental research programmes; areas include charge–pumped 2D systems, solar cells and next generation quantum multiplexer devices. The THz group has grown and research continues to exploit advances with the THz QCL, but also other THz technologies, such as implementing THz waveguide technologies into low temperature cryostats, high speed THz opto-electronic modulation devices using graphene/metamaterials, development of a new THz detector exploiting the in-plane photoelectric, and characterisation of new material systems, such as topological insulators.